unisonic technologies co., ltd utt30n08 preliminary power mosfet www.unisonic.com.tw 1 of 6 copyright ? 2012 unisonic technologies co., ltd qw-r502-732.a 80v, 30a n-channel power mosfet ? description the utc utt30n08 is an n-channel mode power mosfet using utc?s advanced technology to provide customers with planar stripe and dmos technology. this technology allows a minimum on-state resistance and superior switching per formance. it also can withstand high energy pulse in the avalanche and commutation mode. the utc utt30n08 is generally applied in high efficiency switch mode power supplies. ? features * r ds(on) 40m ? @ v gs =10v, i d =30a * low gate charge (typical 48nc) * low c rss (typical 30pf) * high switching speed ? symbol 1 .gate 2.drain 3.source ? ordering information ordering number package pin assignment packing lead free halogen free 1 2 3 utt30n08l-tn3-r UTT30N08G-TN3-R to-252 g d s tape reel utt30n08l-tn3-t utt30n08g-tn3-t to-252 g d s tube note: pin assignment: g: gate d: drain s: source
utt30n08 preliminary power mosfet unisonic technologies co., ltd 2 of 6 www.unisonic.com.tw qw-r502-732.a ? absolute maximum ratings (t c =25c, unless otherwise specified) (note 4) parameter symbol ratings unit drain to source voltage v dss 80 v gate-source voltage v gss 20 v drain current (note 5) continuous t c =25c i d 30 a t c =100c 21.3 a pulsed (note 2) i dm 120 a avalanche energy single pulsed (note 3) e as 300 mj repetitive (note 2) e ar 8 mj power dissipation (t c =25c) p d 28 w junction temperature t j +150 c storage temperature t stg -55~+150 c notes: 1. absolute maximum ratings are those values beyond which the device could be permanently damaged. absolute maximum ratings are stress ratings only and functional device oper ation is not implied. 2. repetitive rating; pulse width limit ed by maximum junction temperature. 3. l=4mh, i as =30a. v dd =50v, r g =25 ? , starting t j =25c 4. drain current limited by maximum junction temperature ? thermal data parameter symbol ratings unit junction to ambient ja 110 c/w junction to case jc 4.53 c/w ? electrical characteristics parameter symbol test conditions min typ max unit off characteristics drain-source breakdown voltage bv dss i d =250a, v gs =0v, t j =150c 80 v drain-source leakage current i dss v ds =80v, v gs =0v, 1 a gate- source leakage current forward i gss v gs =+20v, v ds =0v +100 na reverse v gs =-20v , v ds =0v -100 na on characteristics gate threshold voltage v gs ( th ) v gs =v ds , i d =250a 2.0 4.0 v static drain-source on-state resistance r ds ( on ) v gs =10v, i d =30a 32 40 m ? dynamic parameters input capacitance c iss v ds =25, v gs =0v, f=1.0mhz 2400 pf output capacitance c oss 390 pf reverse transfer capacitance c rss 30 pf
utt30n08 preliminary power mosfet unisonic technologies co., ltd 3 of 6 www.unisonic.com.tw qw-r502-732.a ? electrical characteristics(cont.) parameter symbol test conditions min typ max unit switching parameters total gate charge q g v ds =60v, v gs =10v, i d =30a (note 1, 2) 48 60 nc gate to source charge q gs 15 nc gate to drain ("miller") charge q gd 20 nc turn-on delay time t d ( on ) v dd =30v, i d =15a, r g =4.7 ? (note 1, 2) 45 ns rise time t r 60 ns turn-off delay time t d ( off ) 115 ns fall-time t f 66 ns source- drain diode ratings and characteristics maximum body-diode continuous current i s 30 a maximum body-diode pulsed current i sm 120 a drain-source diode forward voltage v sd i sd =30a, v gs =0v 1.4 v notes: 1. pulse test: pulse width 300s; duty cycle 2%. 2. essentially independent of operating temperatur e typical characteristics
utt30n08 preliminary power mosfet unisonic technologies co., ltd 4 of 6 www.unisonic.com.tw qw-r502-732.a ? test circuits and waveforms same type as d.u.t. l v dd driver v gs r g - v ds d.u.t. + * dv/dt controlled by r g * i sd controlled by pulse period * d.u.t.-device under test - + peak diode recovery dv/dt test circuit p. w. period d= v gs (driver) i sd (d.u.t.) i fm , body diode forward current di/dt i rm body diode reverse current body diode recovery dv/dt body diode forward voltage drop v dd 10v v ds (d.u.t.) v gs = p.w. period peak diode recovery dv/dt waveforms
utt30n08 preliminary power mosfet unisonic technologies co., ltd 5 of 6 www.unisonic.com.tw qw-r502-732.a ? test circuits and waveforms (cont.) v ds 90% 10% v gs t d(on) t r t d(off) t f switching test circuit switching waveforms 10v charge q gs q gd q g v gs gate charge test circui t gate charge waveform v dd t p time bv dss i as i d(t) v ds(t) unclamped inductive switching test circuit unclamped inductive switching waveforms
utt30n08 preliminary power mosfet unisonic technologies co., ltd 6 of 6 www.unisonic.com.tw qw-r502-732.a utc assumes no responsibility for equipment failures that result from using products at values that exceed, even momentarily, rated values (such as maximum ratings, operating condition ranges, or other parameters) listed in products specifications of any and all utc products described or contained herein. utc products are not designed for use in life support appliances, devices or systems where malfunction of these products can be reasonably expected to result in personal injury. reproduction in whole or in part is prohibited without the prior writ ten consent of the copyright owner. the information presented in this document does not form part of any quotation or contract, is believed to be accurate and reliable and may be changed without notice.
|
